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Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor

Journal Article

Wijnheijmer, A.P., Marti, X., Holy, V., Cukr, M., Novak, V., Jungwirth, T. & Koenraad, P.M. (2012). Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor. Applied Physics Letters, 100(11):112107 in Web of Science Cited 4 times

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Abstract

We performed scanning tunneling microscopy and spectroscopy on a LiMnAs(001) thin film

epitaxially grown on an InAs(001) substrate by molecular beam epitaxy. While the in situ cleavage

exposed only the InAs(110) non-polar planes, the cleavage continued into the LiMnAs thin layer

across several facets. We combined both topography and current mappings to confirm that the

facets correspond to LiMnAs. By spectroscopy we show that LiMnAs has a band gap. The band

gap evidenced in this study, combined with the known NeĀ“el temperature well above room

temperature, confirms that LiMnAs is a promising candidate for exploring the concepts of high

temperature semiconductor spintronics based on antiferromagnets.