Erbium ion implantation doping of opto-electronic materials operating at 1.5 mu m

Conference Contribution

Polman, A., Snoeks, E., Hoven, van den, G.N., Custer, J.S., Hendriksen, B., Diemeer, M.B.J., Uffelen, van, J.W.M., Oei, Y.S., Smit, M.K., Fleuster, M. & Buchal, C. (1993). Erbium ion implantation doping of opto-electronic materials operating at 1.5 mu m. 19th European Conference on Optical Communication : ECOC '93 (pp. 61-64). Zurich, Switzerland: Swiss Electrotechical Association. Read more: Medialink/Full text

Abstract

 

Soda-lime silicate and Al/sub 2/O/sub 3/ waveguide films, LiNbO/sub 3/ single crystal, as well as crystal Si are doped with erbium by ion implantation. All materials show luminescence at 1.5 mu m, characteristic for Er, with lifetimes up to 12 ms