N-type self-assembled monolayer field-effect transistors and complementary inverters

Article

Ringk, A., Li, X., Gholamrezaie, F., Smits, E.C.P., Neuhold, A., Moser, A., Marel, van der, Cees, Gelinck, G.H., Resel, R., Leeuw, de, D.M. & Strohriegl, P (2013). N-type self-assembled monolayer field-effect transistors and complementary inverters. Advanced Functional Materials, 23(16), 2016-2023. In Scopus Cited 36 times.

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Abstract

 

This work describes n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a perylene derivative which is covalently fixed to an aluminum oxide dielectric via a phosphonic acid linker. N-type SAMFETs spontaneously formed by a single layer of active molecules are demonstrated for transistor channel length up to 100 mu m. Highly reproducible transistors with electron mobilities of 1.5 x 10(-3) cm(2)V(-1) s(-1) and on/off current ratios up to 10(5) are obtained. By implementing n-type and p-type transistors in one device, a complimentary inverter based solely on SAMFETs is demonstrated for the first time.