Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor
Wijnheijmer, A.P., Marti, X., Holy, V., Cukr, M., Novak, V., Jungwirth, T. & Koenraad, P.M. (2012). Scanning tunneling microscopy reveals LiMnAs is a room temperature anti-ferromagnetic semiconductor. Applied Physics Letters, 100(11):112107 In Scopus Cited 7 times.
We performed scanning tunneling microscopy and spectroscopy on a LiMnAs(001) thin film
epitaxially grown on an InAs(001) substrate by molecular beam epitaxy. While the in situ cleavage
exposed only the InAs(110) non-polar planes, the cleavage continued into the LiMnAs thin layer
across several facets. We combined both topography and current mappings to confirm that the
facets correspond to LiMnAs. By spectroscopy we show that LiMnAs has a band gap. The band
gap evidenced in this study, combined with the known Ne´el temperature well above room
temperature, confirms that LiMnAs is a promising candidate for exploring the concepts of high
temperature semiconductor spintronics based on antiferromagnets.