Individual semiconductor nanostructures and single impurities are offering interesting options to achieve and explore the ultimate limits in device miniaturization. Therefore we study the formation and electro-optic properties of individual semiconductor nano objects such as quantum dots, quantum rings and single impurities. To this end scanning probe techniques and atom probe tomography are used to determine the true 3D structure of various semiconductor nanostructures. By this we aim to understand and control their formation during growth and to link their structure to the electro-optic properties that we determine for instance by confocal microscopy. Scanning probe microscopy is furthermore used to explore and manipulate single (magnetic) impurities in a semiconductor material. This work has allowed for a deep understanding of quantum mechanical aspects that determine the properties of a whole range of impurities and defects in semiconductors.
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Our most recent peer reviewed publications
Strain engineering in Ge/GeSn core/shell nanowiresApplied Physics Letters (2019)
Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfacesPhysical Review Materials (2019)
Te incorporation and activation as n-type dopant in self-catalyzed GaAs nanowiresPhysical Review Materials (2019)
Phonon engineering in twinning superlattice nanowiresNano Letters (2019)
High mobility stemless InSb nanowiresNano Letters (2019)