MBE Createc III/V
Molecular Beam Epitaxy (MBE) reactor to grow epitaxial layers for GaAs based materials Closed UHV system with load lock in Glovebox.
Molecular Beam Epitaxy (MBE) CreaTec SY022 for III/V materials
Molecular Beam Epitaxy (MBE) reactor for epitaxial growth of GaAs based materials for solar cells, Nano wires, Quantum dots and Layers.
UHV system with Load lock in Glove box to avoid oxidation of samples
Growing epitaxial layers, Quantum Dots and Nanowires with the elements In, Ga, Al, As, Sb and dopants Be and Si
Possibility with Au assisted VLS growth for Nanowires.
Oxygen free loading and unloading with Load lock in a glove box with N2 environment.
H2O and O2 level <<0.1 PPM
Maximal diameter of wafer 2 inch, ¼ inch Indium free with possibility for Indium and Ga mounting.
Only internal trained operators