MBE Createc II/IV/VI
Molecular Beam Epitaxy (MBE) reactor to grow epitaxial layers, Nano-wires for
II/IV/VI materials with Closed UHV system with load lock in Glovebox
Molecular Beam Epitaxy (MBE) CreaTec SY054 for II/IV/VI materials
Molecular Beam Epitaxy (MBE) reactor for epitaxial growth of II/IV/VI based materials for solar cells, Nano wires and Layer UHV system with Load lock in Glove box to avoid oxidation of samples
Growing epitaxial layers and Nanowires with elements Sn, Cd, Pd, Te and Se and compounds SnTe and CdTe
Possibility with Au assisted VLS growth for Nanowires.
Oxygen free loading and unloading with Load lock in a glove box with N2 environment. H2O and O2 level <<0.1 PPM
Maximal diameter of wafer 2 inch, ¼ inch Indium free with possibility for Indium and Ga mounting.
Only internal trained operators