MBE Createc II/IV/VI

Molecular Beam Epitaxy (MBE) reactor to grow epitaxial layers, Nano-wires for

II/IV/VI materials with Closed UHV system with load lock in Glovebox


Molecular Beam Epitaxy (MBE) CreaTec SY054 for II/IV/VI materials


Molecular Beam Epitaxy (MBE) reactor for epitaxial growth of II/IV/VI based materials for solar cells, Nano wires and Layer UHV system with Load lock in Glove box to avoid oxidation of samples


Growing epitaxial layers and Nanowires with elements Sn, Cd, Pd, Te and Se and compounds SnTe and CdTe

Possibility with Au assisted VLS growth for Nanowires.

Hydrogen cleaning

Oxygen free loading and unloading with Load lock in a glove box with N2 environment. H2O and O2 level <<0.1 PPM


Maximal diameter of wafer 2 inch, ΒΌ inch Indium free with possibility for Indium and Ga mounting.

User conditions

Only internal trained operators