MBE Createc

Molecular Beam Epitaxy (MBE) reactor to grow epitaxial layers with the components In, Ga, As and Al with the dopants Be and Si, on GaAs wafers. Closed ultrahigh vacuum system with loadlock with the possibility to inject gases from outside(NH3, H2, O2).

Name

Molecular Beam Epitaxy (MBE) reactor Createc SY022 MBE

Application

Molecular Beam Epitaxy (MBE) reactor to grow epitaxial layers with the components In, Ga, As and Al with the dopants Be and Si, on GaAs wafers. Closed ultrahigh vacuum system with loadlock with the possibility to inject gases from outside(NH3, H2, O2).

Characteristics

- Growing epitaxial layers with the components In, Ga, As, Al, Be, Si on GaAs wafers.
- Ultra high vacuum
- Loadlock
- Possibility to inject gases from outside(NH3, H2, O2).

Specimen

Maximal diameter of wafer: 2 inch

User conditions

Only used by operator

Remarks