Metal Organic Vapour Phase Epitaxy (MOVPE) reactor to grow epitaxial layers with the components In, Ga, As, P, and the doping materials Zn, Si, and Fe on InP wafers.

Name

Aixtron MOVPE 200/4 and 200

Application

Growing epitaxial layers

Growing epitaxial layers on InP wafers

Characteristics

Double reactor setup.
Aixtron 200/4
Aixtron 200

- Growing epitaxial layers with the components In, Ga, As, P, Zn, Si, and Fe on InP wafers.
- Precursor materials are tertiarybutylphosfine, tertiarybutylarsine, trimethylindium, trimethylgallium, diethylzink, ditertiarybutylsilaan and ferrocene. 
- Low vaccuum system (100 mbar) with H2 cariergas.
- Loadlock with N2 flushed glovebox.

Specimen

Maximal 2 inch wafers

User conditions

Only used by operator

Remarks