Oxford Oxide/Nitride ICP PECVD

PE-CVD reactor in which the plasma is generated by an ICP-source. The system is equipped with a loadlock.

Name

Oxford PlasmaLab System100 ICP PECVD

Application

Deposition of SiNx and SiOx

Deposition of etching mask layers

Characteristics

ICP-source

SiH4/NH3/N2 for nitride, SiH4/N2O/N2 for oxide

Optional monitoring available with in-situ spectroscopic ellipsometry

Specimen

Wafer(like) substrates with a maximum diameter of 200 mm

User conditions

Only used by operator

Remarks