Oxford Oxide/Nitride PECVD
Parallel plate reactor. Deposition of nitride and oxide. Deposition of etching mask layers. | |
Name | Oxford Plasmalab System 100 Oxide/Nitride PECVD |
Application | Deposition of nitride and oxide. Deposition of etching mask layers. |
Characteristics | Deposition at 300 °C SiH4/NH3/N2 for nitride, SiH4/N2O/N2 for oxide. |
Specimen | Maximal sample size 8 inch |
User conditions | Only used by operator |
Remarks | Preconditioning necessary when switching between nitride and oxide depositions. |