Oxford Oxide/Nitride PECVD

Parallel plate reactor. Deposition of nitride and oxide. Deposition of etching mask layers.

Name

Oxford Plasmalab System 100 Oxide/Nitride PECVD

Application

Deposition of nitride and oxide.

Deposition of etching mask layers.

Characteristics

Deposition at 300 °C

SiH4/NH3/N2 for nitride,

SiH4/N2O/N2 for oxide.

Specimen

Maximal sample size 8 inch

User conditions

Only used by operator

Remarks

Preconditioning necessary when switching between nitride and oxide depositions.