Epitaxial Growth

In our cleanroom, we have two molecular beam epitaxy (MBE) systems for the growth of InGaAs-based materials. The MBEs are used for basic research on InGaAs quantum dots (QDs) and related structures. On the material side, a key challenge is the site-control of the QD nucleation and the integration of QDs with ultranarrow linewidths into single-photon devices and circuits.

In addition, we have two metalorganic vapor phase epitaxy (MOVPE) systems.

The horizontal double-reactor MOVPE is mainly used for growing active materials (bulk, quantum wells and quantum dots) for device applications, such as lasers, optical amplifiers and photonic integrated circuits in the 1.55 µm-2 µm wavelength region.

The close-coupled showerhead MOVPE is used for the growth of nanowires. A variety of group III (Al, Ga, and In), group V (P, As, and Sb), and impurity dopants (Si, Si, Zn, Fe) are available. Research is focused on exploring the optical and electrical properties of nanowires by tuning their crystal structure, dimensions, composition and lattice strain. This reactor is used as the National Nanowire Growth Facility.  Academic groups in the Netherlands can request for materials or collaborations (e.p.a.m.bakkers@tue.nl)