This set-up consists of a cryogenic probe station integrated with a confocal optical microscope. It allows electro-optical testing of light-emitting diodes or optical detectors with 2 μm spatial resolution and 20 GHz electrical bandwidth at 4K.
Our general photoluminescence facility provides detection between 500 and 1600 nm with multichannel detectors and up to 3.5 µm with a single channel InSb detector. It also allows the luminescence mapping of as-grown wafers with a sub-micron resolution.
Room temperature Scanning Near Field Optical Microscope equipped with: InGaAs APD, special probes for simultaneous far-field optical access or nanoscale fluid delivery, nanopositioned lensed fibers system for coupling with on-sample waveguides.
Two-wavelength pump-probe spectroscopy with a timing jitter below 100 fs, either using two synchronized Ti:sapphire lasers or the combination of a Ti:sapphire laser and an Optical Parametric Oscillator (OPO) tunable between 1030 and 1300 nm and 1350-1600 nm. Presently, the setup is mainly used for time-resolved differential reflectivity (sensitivity ΔR/R<5x10-7).
Our microphotoluminescence facilities allow single dot spectroscopy for both GaAs and InP based nanostructures with a spatial resolution down to 400 nm. The set-up allows resolving linewidths down to 20 microeV for an individual emitter.
The nonclassical statistics of light emitted by self-assembled quantum dots is studied in two photon-correlation experiments, for wavelengths below and above 1000 nm, with temporal resolution down to 40 ps.
To address single spins in semiconductor nanostructures, we study the luminescence in magnetic fields with our low-temperature confocal microscope. The high spatial resolution of 300 nm is combined with the high spectral resolution (10 μeV). The lowest achievable temperature is currently 300 mK.