Plasma Enhanced Chemical Vapor Deposition (PECVD) reactor based on Inductively Coupled Plasma (ICP) source. It is used for the deposition of Si3N4, SiO2 and a-Si:H. Wafer handling up to 4”. Equipped with a loadlock chamber. Automatic pressure control and turbo pump. Process monitoring available with in-situ ellipsometry. Process temperature from 20°C up to 400°C.
Initiated chemical vapor deposition (i-CVD) setup. The filament wires (grid) allows for the homolytic cleavage of the initiator molecules. The subsequent polymerization of the monomer from activated radicals occurs at the sample surface. The setup can also serve as a parallel plate rf-driven PECVD chamber: in this case, the grid is transferred into the side arm of the reactor. Presently, an organosilicon-silicon dioxide chemistry is being investigated.
One of the two thermal CVD systems available in the PMP group. These systems are used for the growth of graphene and carbon nanotubes. The ovens can be heated up to 1200°C and the systems can be operated at atmospheric pressure and low pressure (down to 0.1 mbar). The following gases are available in the systems: hydrogen, argon, methane and ethanol.