Molecular Beam Epitaxy (MBE) reactor to grow epitaxial layers for GaAs based materials Closed UHV system with load lock in Glovebox

Name

Molecular Beam Epitaxy (MBE) Veeco GenXplor S820 for III/V materials

Application

Molecular Beam Epitaxy (MBE) reactor for epitaxial growth of GaAs based materials for solar cells, Nano wires, Quantum dot and Layer.

High quality material with high uniformity and low roughness (<<0.5nm/µm2) for epitaxial layers.

Temperature control over the wafer << 0.5 C

UHV system with Load lock.

Characteristics

Growing epitaxial layers, Quantum Dots and Nanowires with the elements In, Ga, Al, As, and dopants Be and Si

No Au allowed.

Specimen

Maximal diameter of wafer 3-inch Indium free with possibility for Indium mounting.

User conditions

Only internal trained operators

Remarks