Reactive Ion Etching reactor for etching Dielectric Materials like: Si-Nitride and Si-Oxide using timed etch steps without endpoint detection.

Name

Oxford PlasmaLab System 100 Nitride RIE

Application

Patterning of silicon nitride and silicon oxide layers with photo resist mask for waveguide definition.

Characteristics

Baseline recipes based on O2 / CHF3 chemistry with max 100% CHF3.

Specimen

Max 3 inch processing

User conditions

Requires training or supervision

Remarks

Pst etch plasma cleaning required.