InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

Conferentiebijdrage

Revin, D.G., Wilson, L.R., Zibik, E.A., Green, R.P., Cockburn, J.W., Steer, M.J., Airey, R.J., Hopkinson, M., Offermans, P., Koenraad, P.M. & Wolter, J.H. (2009). InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm. 2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1 (pp. 248-250). Piscataway: Institute of Electrical and Electronics Engineers (IEEE).

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Abstract

 

We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system