Method for improving writability of SRAM memory
Octrooi-PublicatieSharma, V., Cosemans, S., Dehaene, W., Catthoor, F., Ashouei, M. & Huisken, J. (2012). Method for improving writability of SRAM memory. Patent No. US2012063211.
A method for improving writability of an SRAM cell is disclosed. In one aspect, the method includes applying a first voltage higher than the global ground voltage and a third voltage higher than the global supply voltage to the ground supply nodes of the invertors of the SRAM cell, pre-charging one of the complementary bitlines to the global ground voltage, and applying a second voltage higher than the global supply voltage to the access transistors during a write operation to the SRAM cell.