Oxford Instruments OpAL
Atomic layer deposition (ALD) reactor, both plasma assisted and thermal. Open load system equipped three precursors-inputs plus a separate H2O precursor input.
Oxford Instruments OpAL ALD reactor
Deposition of ultra thin layers
Deposition of metal oxides, nitrides, and metals.
- Typical layer thicknesses are between 1-50 nm
The deposition of ultrathin layers with (plasma-assisted) atomic layer depostion (ALD) techniques: Materials, such as Al2O3, TiO2, HfO2, Ta2O5, Er2O3.
Optional monitoring available with in-situ spectroscopic ellipsometry, mass spectroscopy and optical emission spectroscopy during process.
Wafer(like) and other substrates with a maximum diameter of 200 mm.
Only used by operator
Not all materials and processes are continuously available.