Atomic layer deposition (ALD) reactor, both plasma assisted and thermal. Open load system equipped three precursors-inputs plus a separate H2O precursor input.

Name

Oxford Instruments OpAL ALD reactor

Application

Deposition of ultra thin layers

Deposition of metal oxides, nitrides, and metals.

Characteristics

- Typical layer thicknesses are between 1-50 nm
- (Extreme) high surface topologies

The deposition of ultrathin layers with (plasma-assisted) atomic layer depostion (ALD) techniques: Materials, such as Al2O3, TiO2, HfO2, Ta2O5, Er2O3.
Input of samples without loadlock.

Optional monitoring available with in-situ spectroscopic ellipsometry, mass spectroscopy and optical emission spectroscopy during process.

Specimen

Wafer(like) and other substrates with a maximum diameter of 200 mm.

User conditions

Only used by operator

Remarks

Not all materials and processes are continuously available.