MBE Veeco GENxplorer
Molecular Beam Epitaxy (MBE) reactor to grow epitaxial layers for GaAs based materials Closed UHV system with load lock in Glovebox
Molecular Beam Epitaxy (MBE) Veeco GenXplor S820 for III/V materials
Molecular Beam Epitaxy (MBE) reactor for epitaxial growth of GaAs based materials for solar cells, Nano wires, Quantum dot and Layer.
High quality material with high uniformity and low roughness (<<0.5nm/µm2) for epitaxial layers.
Temperature control over the wafer << 0.5 C
UHV system with Load lock.
Growing epitaxial layers, Quantum Dots and Nanowires with the elements In, Ga, Al, As, and dopants Be and Si
No Au allowed.
Maximal diameter of wafer 3-inch Indium free with possibility for Indium mounting.
Only internal trained operators