MOVPE Aixtron Multiwafer

Growth of InP and GaAs based matrial

Name

MOVPE Aixtron Multiwafer Reactor (L-reactor)

Application

III/V InP and GaAs based growth of thin layers, quantum wells and quantum dots

Characteristics

Available sources:  TMIn, TMGa, TMAl,

Available doping: DEZn, 1000 ppm H2S, 1% DiSilaan, DCPFe

Specimen

Clean InP/GaAs based matrial  2 inch max 3 inch

User conditions

Requires  Trained personal with supervision of Process engineer