MOVPE Aixtron Multiwafer
Growth of InP and GaAs based matrial | |
Name | MOVPE Aixtron Multiwafer Reactor (L-reactor) |
Application | III/V InP and GaAs based growth of thin layers, quantum wells and quantum dots |
Characteristics | Available sources: TMIn, TMGa, TMAl, Available doping: DEZn, 1000 ppm H2S, 1% DiSilaan, DCPFe |
Specimen | Clean InP/GaAs based matrial 2 inch max 3 inch |
User conditions | Requires Trained personal with supervision of Process engineer |