Roth & Rau Ion Beam Etcher
Ion beam milling reactor with argon. Applied with a magnetron sputter source for SiO2 and a SIMS eindpoint detector. | |
Name | Roth & Rau Unilab Ion Beam Etching |
Application | Substractive method to transfer patterns by Ar ion beam etching (NON SELECTIVE). Controlled depth etching of patterns into thin layers (<200 nm) and deposition of SiO2. High depth resolution substractive pattern transfer. Real-time feedback of etching process by SIMS |
Characteristics | Beam energy 0.2 - 2 keV, ion current <50 mA, ion current density up to 10 mA/cm2, stage cooling, substrate rotation, ion incidence angle adjustable 0-90 deg, beam neutralizer. Standard Ar-ion milling - SiO2 magnetron sputtering / reactive sputtering - SIMS (Secondary Ion Mass Spectroscopy) for end point detection and depth profiling of elements |
Specimen | Maximum size is 4 inch wafers. Note: homogenity 10% over 3 cm. |
User conditions | Only used by operator |
Remarks | Ectching depth limited, typical etch rates: angstroms/s. No toxic materials allowed. |