Roth & Rau Ion Beam Etcher
Ion beam milling reactor with argon. Applied with a magnetron sputter source for SiO2 and a SIMS eindpoint detector.
Roth & Rau Unilab Ion Beam Etching
Substractive method to transfer patterns by Ar ion beam etching (NON SELECTIVE).
Controlled depth etching of patterns into thin layers (<200 nm) and deposition of SiO2.
High depth resolution substractive pattern transfer. Real-time feedback of etching process by SIMS
Beam energy 0.2 - 2 keV,
ion current <50 mA,
ion current density up to 10 mA/cm2,
ion incidence angle adjustable 0-90 deg,
Standard Ar-ion milling
- SiO2 magnetron sputtering / reactive sputtering
- SIMS (Secondary Ion Mass Spectroscopy) for end point detection and depth profiling of elements
Maximum size is 4 inch wafers. Note: homogenity 10% over 3 cm.
Only used by operator
Ectching depth limited, typical etch rates: angstroms/s. No toxic materials allowed.