Jos Haverkort investigates semiconductor nanowires for applications in solar cells and silicon-based light sources. His primary focus is on optical characterization of the nanowires. In the area of solar cells, the use of semiconducting nanowires embedded in a transparent polymer matrix allows for the production of cheap, versatile and very efficient devices. Nanowires feature a very high light extraction efficiency, allowing to achieve very high conversion efficiencies. His largest ambition is to develop a nanowire solar cell which is capable to re-direct all emitted photons back to the sun, to approach the ultimate conversion efficiency of more than 45%. The research group currently holds the world record in efficiency of nanowire InP solar cells (17,8%), which is a significant first step towards the ultimate efficiency flexible solar cell. Haverkort's other ambition is to contribute to a silicon-based light source. Such a light source can be achieved by using hexagonal crystal phase SiGe (Hex-SiGe) which features a direct bandgap allowing to demonstrate efficient light emission. The final challenge is the development of a Hex-SiGe nanolaser, which would revolutionize the electronics industry by adding intra-chip and chip-to-chip communication at the speed of light - offering a significant reduction in energy consumption. Haverkort contributes to this topic through the optical characterization of Hex-SiGe nanowires as well as by serving as the project manager of the European SiLAS consortium, which is heading towards the demonstration of a SiGe nanolaser.
Jos Haverkort studied Physics at Leiden University and obtained his PhD at the same university in 1987 with his thesis "Light-induced drift of Na in noble gases". Since then he has been a researcher at the Department of Applied Physics at Eindhoven University of Technology (TU/e), currently with the Advanced Nanomaterials and Devices research group.
Crystal phase quantum well emission with digital controlNano Letters (2017)
Effective surface passivation of InP nanowires by atomic-layer-deposited Al2O3 with POx interlayerNano Letters (2017)
Growth and optical properties of direct band gap Ge/Ge0.87SN0.13 Core/Shell nanowire arraysNano Letters (2017)
A 17.8% efficiency nanowire solar cell(2017)
Pseudodirect to direct compositional crossover in wurtzite GaP/InxGa1-xP core-shell nanowiresNano Letters (2016)
- Bachelor final project (10ECTS)
- Semiconductor nanophysics
- Physics in perspective
- Condensed matter
No ancillary activities