Synthesis and integration of 2-D nanomaterials
In our group we pioneer atomic layer deposition (ALD) for 2D nanomaterials synthesis. ALD is a scalable, low temperature preparation method for thin films which offers precise thickness control down to the sub-monolayer and can therefore be instrumental for the large area synthesis of 2D materials. The current focus of the group is on ALD of 2D transition metal dichalcogenides (2D-TMDs) for (opto)electronics and catalysis. We use plasma chemistry (plasma-enhanced ALD, PEALD) to control functionalities of the 2D-TMDs, such as morphology, materials phase and stoichiometry. Furthermore, by doping, alloying and by the formation of heterostructures we tune the electrical properties of the 2D TMDs, such as the charge carrier concentration and band gap.
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Recent Publications
Our most recent peer reviewed publications
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Blocking mechanisms in area-selective ALD by small molecule inhibitors of different sizes
Applied Surface Science (2024) -
Influence of High-κ Dielectrics Integration on ALD-Based MoS2 Field-Effect Transistor Performance
ACS Applied Nano Materials (2024) -
The Consequences of Random Sequential Adsorption for the Precursor Packing and Growth-Per-Cycle of Atomic Layer Deposition Processes
Journal of Physical Chemistry Letters (2024) -
Structural Aspects of MoSx Prepared by Atomic Layer Deposition for Hydrogen Evolution Reaction
ACS Catalysis (2024) -
In situ formation of inhibitor species through catalytic surface reactions during area-selective atomic layer deposition of TaN
Journal of Chemical Physics (2024)