Bart Bokmans is a Doctoral Candidate in the Electromechanics and Power Electronics (EPE) group of the Department of Electrical Engineering at the Eindhoven University of Technology (TU/e). His research focusses on modeling and developing modern power converters based on Gallium Nitride (GaN) technology.
I aim to remove barriers for adoption of Gallium Nitride based power converters and to demonstrate their full potential
Bart Bokmans received his BSc degree in Electrical Engineering from Zuyd University of Applied Sciences in 2015 and his MSc degree in Electrical Engineering from Eindhoven University of Technology (TU/e) in 2019. He worked as an engineer at Applied Micro Electronics (AME) from 2015-2019. In 2020 Bokmans joined the EPE group as a PhD candidate for the GaNext project (GaNext Website).
Parasitic Effects from Cooling of GaN Power Transistors(2022)
High-Frequency Inductor Current Estimator for Power Converters23rd European Conference on Power Electronics and Applications, EPE 2021 ECCE Europe (2021)
A Delta-Sigma Modulated Multi-MHz GaN Half-Bridge featuring Zero-Voltage Switching and Blanking Time Compensation12th Annual Energy Conversion Congress and Exposition, ECCE-Asia 2021 (2021)
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